Description
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Software Version: A2.2-Release CIM: SECGEM Process: LAM Metal Main System: Main System (1) OK Handler SystemL LPI2200 (2) OK Factory Interface: NONE MAIN AC/SYSTEM: CONTROLLER (1) OKOEM Model Description
The TCP 9600PTX is a high-density, low-pressure etch system from Lam Research’s TCP product line. It incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.Documents
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LAM RESEARCH CORPORATION
TCP 9600PTX
Verified
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
111959
Wafer Sizes:
8"/200mm
Vintage:
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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LAM RESEARCH CORPORATION
TCP 9600PTX
CATEGORY
Dry / Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
111959
Wafer Sizes:
8"/200mm
Vintage:
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Software Version: A2.2-Release CIM: SECGEM Process: LAM Metal Main System: Main System (1) OK Handler SystemL LPI2200 (2) OK Factory Interface: NONE MAIN AC/SYSTEM: CONTROLLER (1) OKOEM Model Description
The TCP 9600PTX is a high-density, low-pressure etch system from Lam Research’s TCP product line. It incorporates the company’s patented Transformer Coupled Plasma source technology for etching 0.25 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution for their advanced processing needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer configuration or in conjunction with the Alliance multi-chamber cluster platform.Documents
No documents