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The 2300 Flex F is part of Lam’s Flex product family, which offers differentiated technologies and application-focused capabilities for critical dielectric etch applications. Dielectric etch is the process of carving patterns in insulating materials to create barriers between the electrically conductive parts of a semiconductor device. This process faces multiple challenges due to new materials, complex new integration schemes, and scaling at advanced technology nodes. The 2300 Flex F offers exceptional uniformity, repeatability, and tunability enabled by a unique multi-frequency, small-volume, confined plasma design. It also provides high productivity with low defectivity, enabled by in-situ multi-step etch and continuous plasma capability. Additionally, it offers low-risk, cost-effective upgrades that extend product life and maximize return on investment.
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