NANO is a low-pressure plasma system. The cabinets of the system vary depending on the components and options chosen by the user. The chamber volume of the system also varies depending on the version selected. The power supply for the table-top system is 230 V AC, while the standalone system requires 400 V AC with 3 phases. This system is designed to provide efficient and reliable plasma processing for a variety of applications.

DIENER ELECTRONIC

NANO

Diener Nano Q Low-Pressure Plasma Cleaner/Asher/Treatment System

Chamber Type F Description:
Chamber Configuration: Round
Vacuum Chamber Material: Quartz glass
Chamber Cover: Hinged door
Cover Material: Aluminum, glass pane
Inner Diameter: 240 mm
Opening Diameter of Recipient: 230 mm approx.
Chamber Volume: 27 liters approx.
Application Areas: For ultra pure plasma processes, bulk production and manufacturing

Tray Type D Description:
Tray Configuration: Flat
Adapter for the Following Chamber Configuration: Round
Material: Quartz glass
Dimensions: 230 mm W x 580 mm D x 5 mm H
Qty. of Possible Trays: 1
Application Areas: Ultra pure plasma processes

Additional Type J Description:
Tray Configuration: Quartz glass boat
Adapter for the Following Chamber Configuration: Round
Material: Quartz glass
Dimensions: 4" - 300 mm L for 25 pcs. Wafer
Qty. of Possible Trays: 1
Application Areas: Ultra pure plasma processes, Wafer treatment

Electrode Type A Description:
Configuration: Standard electrode
Adapted for the Following Chamber Configuration: Round
Material: Stainless steel / aluminum
Application Areas: Standard plasma processes

Control Type A Description:
Semi Automatic
Vacuum pump, gas flow, plasma processes and venting need to be started separately by hand operation
Free parameters: process time, power, gas, pressure
Generator Type G Description:
Frequency: 2.45 GHz
Power: 0 - 1200 W
Impedance Matching: Fixed
Display of Forward Power: Yes
Display of Reflected Power: No
Safety Switches: Vacuum safety switch and door safety switch
PC Interface: Yes
Main Applications: Activation, cleaning, etching, semi-conductor (front-end), semi-conductor (back-end), plasma polymerization

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