Description
Silica RemovalConfiguration
Silica DisposalOEM Model Description
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.Documents
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TEL / TOKYO ELECTRON
Certas LEAGA
Verified
CATEGORY
Dry Etch
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
97968
Wafer Sizes:
Unknown
Vintage:
Unknown
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TEL / TOKYO ELECTRON
Certas LEAGA
Verified
CATEGORY
Dry Etch
Last Verified: 11 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
97968
Wafer Sizes:
Unknown
Vintage:
Unknown
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Silica RemovalConfiguration
Silica DisposalOEM Model Description
Certas LEAGA™ is an environment-friendly, high-throughput gas chemical etch system designed for 300mm wafers that provides surface etch and cleaning without the use of liquids. Its dry processing features watermark-free, unique selectivity performance over various SiO2 films and precise control of interface cleaning. It offers greater flexibility when combined with TEL’s cleaning system. Certas LEAGA™ supports a number of isotropic process requirements for 3D-structure devices with high utilization capability and low cost operation through its plasma-free solution. Up to six dual-wafer processing chambers can be installed on a single platform to satisfy various process requirements. Easily configurable process units enable device scaling and enhanced productivity. Certas LEAGA™ provides highly precise process solutions such as surface pre-cleaning of Si contact formation, oxide film removal and etch back, selective etch in high-aspect 3D structure, and precise recess process, and has been widely adopted by global semiconductor manufacturers from volume manufacturing to next generation development.Documents
No documents
Similar Listings
View AllNo Similar Listings