Applied Centura Tetra III Advanced Reticle Etch delivers vital nanomanufacturing technology required for etching 45nm photomasks. The Tetra III controls trench depths across quartz masks to <10Å and reduces critical dimension (CD) loss to <10nm-enabling the use of alternating phase shift mask (PSM) and aggressive optical proximity correction techniques in the most critical device layers. The system offers etch processes for chrome, quartz, molybdenum silicon oxynitride (MoSiON), and various new materials for next generation lithography applications.



Applied Materials is committed to accelerating this new PPACt playbook for our customers and partners. We have the broadest and deepest portfolio of products for delivering PPACt innovations to the market. This portfolio encompasses the ability to create and deposit, shape and remove, modify, analyze, and connect materials and devices in new ways. We are unique in having a broad suite of process technology and metrology capabilities under one roof, and we have highly differentiated silicon and packaging lab capabilities. Our Integrated Materials Solutions co-optimize materials deposition, removal, modification, and analysis to create new materials and engineer new structures for high-performance, low-power chips at leading-edge nodes.

CENTURA TETRA III

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