TEL / TOKYO ELECTRON

TRIAS

TRIAS TI/TIN

The MB2-730 is a highly reliable system designed for advanced process capability in tungsten and tungsten silicide CVD applications. It has been in production for 5 years and has proven to be a dominant tool in the CVD tungsten silicide market, with a market share of over 70%. This system is known for its reliability and advanced process capabilities, making it a popular choice for those in the industry.

MB2-730

Trias SPA is a 300mm version of plasma nitridation system. The new system can also be used for oxidation processes.

The Trias SPA uses unique Slot Plane Antenna (SPA) plasma, based on the Radial Line Slot Antenna (RLSA) microwave plasma. It produces high-density plasmas at low electron temperatures to enable damage-free processes at temperatures no higher than 400C. By optimizing the slot configuration of the antenna, the plasma distribution can be adjusted to achieve excellent uniformity, which is comparable to those obtained with advanced furnace technology.

TRIAS SPA

Triase+™ SFD™ TiN has been widely adopted by using SFD™ technology that has both merits of excellent step coverage of ALD and high productivity of CVD.

TRIASe+ SFD TiN

Triase+™ Ti/TiN is a 300mm single-wafer metal CVD system for high step coverage Ti/TiN film formation using TiCl4.

TRIASe+ Ti/TiN

TRIAS W

The Triase+™ EX-II™ TiN Plus HT specializes in high-temperature TiN deposition that is aimed to gain lower contact resistance film with reducing impurity levels.

TRIASe+ EX-II TiN Plus HT

MBB 830

MB2-730 HT-HT

MB2 730HT

TRIASE+ EX-II TI/TIN

Trias High-k CVD system is a 300mm single-wafer cluster tool designed to produce thin-film materials required for the advanced gate stack, which will be incorporated in the most advanced semiconductor devices at the 45nm node and beyond.

TRIAS HIGH-k

The Triase+™ EX-II™ TiN (Titanium Nitride) is an advanced 300mm single wafer deposition system for high speed ASFD which enables high-quality thin film formation with excellent within-wafer uniformity and high step coverage characteristics. Featuring an optimized reactor design with new gas injection module, the system achieves high productivity even in the leading-edge semiconductor device manufacturing, and is used for various applications including formation of contact barriers, capacitor electrodes, word line barriers and metal gates.

TRIASe+ EX-II TiN

The Triase+™HP Ti, single-wafer metal CVD system, accommodates a lot of additional functions such as optimized surface treatments by unique showerhead gas dispersion module and simultaneous TiSix formation technology during Ti deposition. Furthermore the system provides widen temperature control range, lower particle level and higher productivity. Its unique technology addresses the various process requirements of metal deposition that having the structure such as ultra-shallow junction and nickel silicide contacts.

TRIASe+ HP Ti

The Triase+™ SPAi system inherits its predecessors’ reliability, to equally enhance system throughput, achieve higher productivity, lower power consumption (which reduces CO2 emissions), and a smaller footprint. An integrated bias function helps to produce high quality film while maintaining excellent coverage, and making the system suitable for critical FEOL applications including gate nitridation, gate recovery oxidation, STI liner oxidation, and high-k nitridation.

TRIASe+ SPAi

TRIAS WSIX

MB2-730-Wsi

Triase+™ W is a 300mm single-wafer CVD system that delivers high step coverage tungsten (W) film deposition using WF6. By combining rapid heat up and cool down of wafer temperatures and with plasma-less chamber cleaning technology, the system achieves higher productivity and lower CoO. Utilizing SFD and CVD methods respectively, the Triase+™ W provides in-situ deposition of both nucleation and bulk film. This ensures high step coverage, even with small geometry, contact holes. The system is also capable of depositing low-resistance film to meet further scaling needs, and is suitable for such applications as contact plug formation and via filling.

TRIASe+ W

The Triase+™ EX-II™ TiN Plus provides excellent uniformity for conformal metal deposition of TiN on complex structures.

TRIASe+ EX-II TiN Plus

The Triase+™ EX-II™ TiON (Titanium OxyNitride) provides low leakage current TiON film deposition with can be used in MIM capacitor electrode formation.

TEL / TOKYO ELECTRON

Overview

Active Listings

Total Products

Services

Top TEL / TOKYO ELECTRON CVD (Metalization)

TRIAS

TRIAS TI/TIN

MB2-730

TRIAS SPA

List it with Moov and find the perfect buyer in no time at all.

All TEL / TOKYO ELECTRON CVD (Metalization)