Description
SEMConfiguration
2_OEM Model Description
The Hitachi Model S-9260 CD-SEM system has been developed to meet the requirements of these new fabrication processes. Having the following features, it can provide a CD measurement environment suitable for fabricating next-generation semiconductor devices: (1) Excellent observation performance based on the electron optical design common in the S-9000 Series, (2) Enhanced CD measurement reproducibility, throughput, and other basic performance capabilities, (3) Improved process-variation monitoring, (4) Instrument performance maintenance/control support functions, and (5) New process application functions such as those for beam-tilt observations, surface charged-specimen measurements, and ArF-resist measurements.Documents
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HITACHI
S-9260
Verified
CATEGORY
CD-SEM
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
38551
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
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Money Back Guarantee
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Transaction Insured by Moov
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Refurbishment Services
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HITACHI
S-9260
CATEGORY
CD-SEM
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
38551
Wafer Sizes:
Unknown
Vintage:
Unknown
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
SEMConfiguration
2_OEM Model Description
The Hitachi Model S-9260 CD-SEM system has been developed to meet the requirements of these new fabrication processes. Having the following features, it can provide a CD measurement environment suitable for fabricating next-generation semiconductor devices: (1) Excellent observation performance based on the electron optical design common in the S-9000 Series, (2) Enhanced CD measurement reproducibility, throughput, and other basic performance capabilities, (3) Improved process-variation monitoring, (4) Instrument performance maintenance/control support functions, and (5) New process application functions such as those for beam-tilt observations, surface charged-specimen measurements, and ArF-resist measurements.Documents
No documents