The Triase+™HP Ti, single-wafer metal CVD system, accommodates a lot of additional functions such as optimized surface treatments by unique showerhead gas dispersion module and simultaneous TiSix formation technology during Ti deposition. Furthermore the system provides widen temperature control range, lower particle level and higher productivity. Its unique technology addresses the various process requirements of metal deposition that having the structure such as ultra-shallow junction and nickel silicide contacts.

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TRIASe+ HP Ti

NT333™ has large wafer capacity as compared to single or dual wafer processing techniques. With the added capability of pre or post treatment steps included in each ALD cycle, NT333™ is capable of forming films of the highest quality while operating at low temperatures and providing tunable film stresses for a variety of applications. Additionally, NT333™ has unique plasma shield which mitigates plasma damage resulting in high quality films while maintain high stage rotation speeds.

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TRIASe+ HP Ti

NT333

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