Allwin21 Corp. is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Process tool. Manufacturing the new AccuThermo AW Series Atmospheric and Vacuum Rapid Thermal Processors. Compared with traditional RTP systems, Allwin21’s AccuThermo AW RTPs have innovative software and more advanced temperature control technologies to achieve the BEST rapid thermal processing performance (repeatability, uniformity, and stability) with decades of research directly applicable to ours. Focus on extending product lifecycle, providing solutions, and engineering enhancements to many production-proven semiconductor process equipment as well- most directly related to Si and III-V processing. These platforms of OEM semiconductor equipment have been used in Si and III-V production and R&D since the 1990′s. They have proven processes and research. Allwin21 Corp. can customize these OEM systems with Allwin21′s comparable integrated process control system with PC, solid robotic wafer transfer system, and new critical components. This is to achieve the goal of giving our customers a production edge, with right cost, and without having to worry about obsolete parts.

ALLWIN21 / AG ASSOCIATES

AccuThermo AW810M

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Wafer sizes: Small pieces, 2″, 3″, 4″, 5″, 6″, 8″ wafer capability
Recommended ramp up rate: Programmable, 10°C to 120°C per second. Maximum Rate: 200°C (NOT RECOMMENDED)
Recommended steady state duration: 0-300 seconds per step.
Ramp down rate: Non-programmable, 10°C to 200°C per second.
Recommended steady state temperature range: 150°C – 1150°C. Maximum 1250°C (NOT RECOMMENDED)
ERP Pyrometer 450-1250°C with ±1°C accuracy when calibrated against an instrumented thermocouple wafer.
Thermocouple 100-800°C with ±0.5°C accuracy & rapid response.
Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer. (Repetition specifications are based on a 100-wafer set.)
Temperature uniformity: ±8°C across an 8″ (200 mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.)  For a titanium silicide process, no more than 6% increase in non-uniformity during the first anneal at 650°C to 700°C.
Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30 PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas, NH3, N2O2 are used.