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Description
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PECVD Gases: Ar - 500 sccm NH3 - 50 sccm 5%SiH4/N2 - 1000 sccm CF4 - 500 sccm O2 - 500 sccm N2O - 2000 sccm N2 - 2000 sccm CB1 - Main Circuit Breaker CB2 - PSU CB3 - Not Used CB4 - RF Generator CB5 - LF Generator CB6 - TEOS CB7 - Not Used CB8 - Foreline Heat CB9 - Table Heat CB10 - Chamber Heat CB11 - Pumpdown Heat CB12 - Chamber Pump CB13 - Loadlock Pump CB14 - Not UsedOEM Model Description
The Oxford Plasmalab 100 is an inductively coupled plasma (ICP) etcher that is designed for multipurpose use. It is based on fluorocarbon and is capable of anisotropically etching silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature-controlled electrode, which allows users to tailor their etch feature profiles. The manual load system can accommodate substrates of various sizes, ranging from 200mm diameter wafers down to small piecesDocuments
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Verified
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Installed / Idle
Product ID:
81699
Wafer Sizes:
Unknown
Vintage:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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OXFORD
PLASMALAB 100
CATEGORY
PECVD
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Installed / Idle
Product ID:
81699
Wafer Sizes:
Unknown
Vintage:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
PECVD Gases: Ar - 500 sccm NH3 - 50 sccm 5%SiH4/N2 - 1000 sccm CF4 - 500 sccm O2 - 500 sccm N2O - 2000 sccm N2 - 2000 sccm CB1 - Main Circuit Breaker CB2 - PSU CB3 - Not Used CB4 - RF Generator CB5 - LF Generator CB6 - TEOS CB7 - Not Used CB8 - Foreline Heat CB9 - Table Heat CB10 - Chamber Heat CB11 - Pumpdown Heat CB12 - Chamber Pump CB13 - Loadlock Pump CB14 - Not UsedOEM Model Description
The Oxford Plasmalab 100 is an inductively coupled plasma (ICP) etcher that is designed for multipurpose use. It is based on fluorocarbon and is capable of anisotropically etching silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature-controlled electrode, which allows users to tailor their etch feature profiles. The manual load system can accommodate substrates of various sizes, ranging from 200mm diameter wafers down to small piecesDocuments
No documents