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OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
  • OXFORD PLASMALAB 100
Description
Oxford Plasmalab 100 with double chambers
Configuration
Complete ICP/RIE Chamber (RH side) (380 ICP) Includes everything(Baratrons,Penning Gage,Turbo Pump, VAT Gate valve andAPC with PM5 Controller,Slit VAT Valve, Mechanical Clamp Quartz 6",Top Ceramics tube, Lower Electrode) Complete PECVD Chamber (LH Side) (100+PECVD) Includes everything (Baratrons, ,APC VAT Gate valve with PM5 Controller, Slit VAT Valve, DSS Ring.Gas Shower, Lower Electrode) COMPLETE LOADLOCK MODULE: (Middle) •4 RF Generators : Advances Energy (RFPP) -5 LF (50Khz-400Khz) FOR PECVD Advanced Energy High Lite 136 For RIE COMDELL RF-600X for PECVD ADVANCED ENERGY- For ICP PC Computer with PC2000 Oxford Software. ENDPOINT DETECTOR LASER (EPD) for ICP/RIE chamber (Sophie) 2 Gas Pods with 10 MFCs model MKS 1179A ICP/RIE Gas Pod: SF6- 50sccm O2-50sccm He-200sccm C4F8-100sccm PECVD Gas Pod NH3-100sccm N2O- 3 SLM Ar 90% +B2H6 10% - 50sccm (Boron) Ar 90% +PH3 10%- 50sccm (Phosphine) N2 95% + Sih4 5%- 1 SLM (Silane) Ar 90% + GeH4 10% - 50 sccm (Germane) CHILLER for ICP/RIE Process Cooling Control. TRANSFORMER 3 Phase. Vacuum Pumps x 3
OEM Model Description
The Oxford Plasmalab 100 is an inductively coupled plasma (ICP) etcher that is designed for multipurpose use. It is based on fluorocarbon and is capable of anisotropically etching silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature-controlled electrode, which allows users to tailor their etch feature profiles. The manual load system can accommodate substrates of various sizes, ranging from 200mm diameter wafers down to small pieces
Documents
CATEGORY
PECVD

Last Verified: 4 days ago

Key Item Details

Condition:

Used


Operational Status:

Deinstalled


Product ID:

116992


Wafer Sizes:

6"/150mm


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

OXFORD

PLASMALAB 100

verified-listing-icon
Verified
CATEGORY
PECVD
Last Verified: 4 days ago
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Key Item Details

Condition:

Used


Operational Status:

Deinstalled


Product ID:

116992


Wafer Sizes:

6"/150mm


Vintage:

Unknown


Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
Oxford Plasmalab 100 with double chambers
Configuration
Complete ICP/RIE Chamber (RH side) (380 ICP) Includes everything(Baratrons,Penning Gage,Turbo Pump, VAT Gate valve andAPC with PM5 Controller,Slit VAT Valve, Mechanical Clamp Quartz 6",Top Ceramics tube, Lower Electrode) Complete PECVD Chamber (LH Side) (100+PECVD) Includes everything (Baratrons, ,APC VAT Gate valve with PM5 Controller, Slit VAT Valve, DSS Ring.Gas Shower, Lower Electrode) COMPLETE LOADLOCK MODULE: (Middle) •4 RF Generators : Advances Energy (RFPP) -5 LF (50Khz-400Khz) FOR PECVD Advanced Energy High Lite 136 For RIE COMDELL RF-600X for PECVD ADVANCED ENERGY- For ICP PC Computer with PC2000 Oxford Software. ENDPOINT DETECTOR LASER (EPD) for ICP/RIE chamber (Sophie) 2 Gas Pods with 10 MFCs model MKS 1179A ICP/RIE Gas Pod: SF6- 50sccm O2-50sccm He-200sccm C4F8-100sccm PECVD Gas Pod NH3-100sccm N2O- 3 SLM Ar 90% +B2H6 10% - 50sccm (Boron) Ar 90% +PH3 10%- 50sccm (Phosphine) N2 95% + Sih4 5%- 1 SLM (Silane) Ar 90% + GeH4 10% - 50 sccm (Germane) CHILLER for ICP/RIE Process Cooling Control. TRANSFORMER 3 Phase. Vacuum Pumps x 3
OEM Model Description
The Oxford Plasmalab 100 is an inductively coupled plasma (ICP) etcher that is designed for multipurpose use. It is based on fluorocarbon and is capable of anisotropically etching silicon, silicon oxide, and other dielectric materials. The tool is equipped with a temperature-controlled electrode, which allows users to tailor their etch feature profiles. The manual load system can accommodate substrates of various sizes, ranging from 200mm diameter wafers down to small pieces
Documents