November 10, 2011 – Applied Materials, Inc. announced the successful completion of its acquisition of Varian Semiconductor Equipment Associates, Inc. 
Varian is the leading supplier of ion implantation equipment used by chip makers and has been applying this technology to crystalline silicon wafers for photovoltaic panels. Varian will operate as a business unit of Applied's Silicon Systems Group.

The Varian VIISta 900 3D system is the industry’s flagship medium-current ion implanter for high-volume manufacturing beyond the 2xnm node. Its beam-line architecture has been specially designed with the angle accuracy and beam shape control necessary for exact dopant placement and minimal within-wafer and wafer-to-wafer variability for applications in logic finFETs and 3D memory structures. These capabilities also benefit CMOS image sensor technology as well as the most advanced planar structures.

APPLIED MATERIALS (AMAT) / VARIAN

VIISta 900-3D

VIISta XP

The EHPi-500 with a wider energy range up to 780 keV, 10% higher maximum throughputs, and new statistical process monitoring capabilities. This industry-proven system offers the highest industry throughput and the widest energy range....all in the most reliable medium current system available for features sizes down to 0.18 micron and wafer sizes up to 200mm.

E500-EHPi

The VIISta 810 HP provides precise total incident angle and dosimetry control to enable tighter distribution of electrical device parameters and a 50% reduction in contamination to enhance device yields. The generic VIISta platform covers the range of ion implantation energies from 200eV through to 3.75 MeV. For medium current implants in the middle of that range, the VIISta 810 HP provides control of Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer, the company claimed.

VIISta 810HP

The VIISta 900XP delivers precision, cleanliness, productivity, and production worthiness in the medium current ion implantation market. In addition, an extended energy range that allows for operation at 300keV and 600keV with + and ++ charge states, respectively, makes the VIISta 900XP more productive than traditional batch high-energy tools for sub-MeV well applications.

VIISTA 900XP

The  Tandetron  1520  and  Genus  1510  were  Genus' previous generation MeV ion implant  products. The use of the high energy (MeV) implantation process has been expanded into mass semiconductor production lines in the past couple of years mainly for process simplification and associated cost reduction. In order to meet this requirement, Genus Inc. has introduced its third generation high energy ion implanter "Tandetron 1520" with a significantly reduced system foot print compared to its predecessors, the Genus G1500 and the G1510 MeV implanters.

TANDETRON 1520

The VIISta 810XP is the industry standard in productive ion implant, providing the highest overall throughput, precise doping, and unmatched contamination control. It is the most productive tool in the fab, with a 500wph medium current ion implanter and an energy range of 2keV – 810keV.

VIISta 810XP

E220-EHPi

VIISta 900XPT

The VIISta 810 is a 300 mm medium current ion implanter. It was designed to address the challenges posed by the transition to 300 mm diameter substrates with device line widths below 180 nm.

VIISta  810

The VIISta 810XEr is a medium current ion implanter with an energy range of 2keV to 810keV. It is production-proven and is the preferred choice for medium current applications. It is ideal for moderate capacity needs or for adding higher capacity to match future ramp requirements.

VIISta 810XER

The VIISta 810EHP is a single wafer ion implanter manufactured by Varian Semiconductor. It is designed to provide superior overall throughput, precision doping capability, and unmatched contamination control. The tool excels at various types of implants, including Vt, channel, retrograde well, pocket, and halo implants. This makes it a versatile and reliable choice for semiconductor manufacturing.

VIISta 810EHP

The AMAT VIISTA 810XE (formerly Varian VIISTA 810XE) is part of a single wafer ion implanter series. The VIISta 810XE is a highly productive medium current ion implanter that operates within the energy range of 2keV to 810keV, with an optional range of 2keV to 900keV. It is considered the industry standard for its maximum throughput of over 400 wafers per hour, precise doping with a patented dose control system, and unmatched contamination control with a unique dual magnet beamline.

VIISta 810XE

VIISTA platform has been designed to accommodate four different products: high current, medium current, high energy, and plasma doping

VIISta 80MC

E220HP is Medium Current Ion Implanter which processes one or two cassettes of wafers as a batch, a single wafer at a time.

E220-HP

The Varian E220 is a medium current ion implanter that was used for research and development purposes. It was first introduced in 1993 and has had minimal usage. The tool has undergone several updates, including a new monitor, rebuilt turbo, and replaced gas box.

E220

The Varian 350D is a medium current ion implanter that is capable of implanting Boron (B11 or BF2) or Phosphorous (P31) in 4” or 6” wafers with doses of 1E12 to 5E15. Implant energy levels can be adjusted from 10KeV and 200 KeV1. It is set up for 100mm and 150mm round substrates. It has applications in power devices, memory, logic, analog, discrete and MEMS.

350D

 E500HP is a Medium Current Ion Implanter which processes one or two cassettes of wafers as a batch, a single wafer at a time.

E500-HP

E220-EHP

The VARIAN E500 is a medium current ion implanter system designed for use with 150mm wafer sizes. This system is capable of delivering precise and accurate implantation of ions into semiconductor wafers, making it an essential tool in the manufacturing of semiconductor devices.

E500

The E500-EHP is a medium current ion implanter made by AMAT (Varian). It processes one or two cassettes of wafers as a batch, a single wafer at a time.

E500-EHP

The VIISta 3000XP, built on the acclaimed Varian dual-magnet single-wafer architecture, delivers the angle precision required for advanced high-energy applications. The VIISta 3000XP is also ideally suited for medium-current back-up. The system features the same single-wafer end station, dosimetry system, and wafer positioning system as the market-leading medium-current VIISta 900XP.

VIISta 3000XP

The VIISta HE is a single-wafer high energy implanter by Varian Semiconductor. It is popular for high volume DRAM production and serves a range of semiconductor implant applications. It features True Zero degree implant, low contamination, and outstanding process accuracy. The True Zero capability provides an advantage for increased device packing density in high-performance devices. The VIISta HE offers excellent productivity, uniformity, angle control, and medium current back-up flexibility. It covers retrograde well, triple well, buried layers, and pocket applications.

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

6" Fab For Sale from Moov - Click Here to Learn More

APPLIED MATERIALS (AMAT) / VARIAN

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E220-EHPi

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