The SOPHI-200 is a compact ion implanter designed by ULVAC using their latest advanced technology. It is capable of running substrate sizes up to 200mm in diameter and comes in two energy ranges: up to 200KeV or up to 260KeV. This system is a powerful tool for ion implantation and is suitable for a wide range of applications.

ULVAC

SOPHI-200

The IH-860 and IH-860P are high-energy ion implanters that provide stable implant up to 1,290keV for triple charged ions. They are compact in size, equivalent to a 200-keV medium current one, and incorporate dual end-station for high productivity. These implanters are designed to ensure high productivity not only in high-energy regions but even in the energy regions of 200ke-V devices.

IH860

SOPHI-200/260

IPZ-9001

SOPHI-400 is a high-energy ion implanter that is capable of implanting ions at energies up to 2400 keV. It is a cluster type implanter, which means it can handle thin wafers and is compatible with wafer sizes up to 200mm. The system features a parallel beam and is commonly used in the power device manufacturing process, specifically for IGBTs. Its high energy and compatibility with thin wafers make it a versatile tool for a variety of applications.

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SOPHI-200

IH860

SOPHI-200/260

IPZ-9001

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