Description
No descriptionConfiguration
Si02/TEOS -Process: SiO2-SiN- PSG-BSG-BPSG -SMIF: No -Aligner: No -Loaders: One arm robot -Sensors: Wafer detection – cassette door closed -Gas box: 8 stick -Configuration of each process module: One process chamber (SiO2-SiN- PSG-BSG-BPSG) -SW Version: 4.31OEM Model Description
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.Documents
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LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
Verified
CATEGORY
PECVD
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
114673
Wafer Sizes:
6"/150mm
Vintage:
1990
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
CATEGORY
PECVD
Last Verified: Over 30 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
114673
Wafer Sizes:
6"/150mm
Vintage:
1990
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Si02/TEOS -Process: SiO2-SiN- PSG-BSG-BPSG -SMIF: No -Aligner: No -Loaders: One arm robot -Sensors: Wafer detection – cassette door closed -Gas box: 8 stick -Configuration of each process module: One process chamber (SiO2-SiN- PSG-BSG-BPSG) -SW Version: 4.31OEM Model Description
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.Documents
No documents