Ulvac: UNA 2200 asher, two-chamber, microwave downstream plus RIE, 50 wafers per hour, 8-inch capable.

ULVAC

UNA-2200

NE-950EX

NE- 5700

The ENVIRO™ Advanced Dry Strip System is a single wafer load-locked MESC compatible cluster tool designed to strip photoresist and etch sidewall polymers (veils) using precise optical end-point detection, downstream microwave, and non-damage RIE modes. It is excellent for eliminating wet solvent/acid stripper and can be used for post-high dose implant photo-resist stripping, post-metal etch photoresist stripping, post-via/contact etch photoresist stripping, and post-poly/polycide etch photoresist stripping. The dual chamber configuration can be operated in high throughput or independent parallel processing mode, and the control system features Windows™ based software, off-line recipe editing, SECS/GEM communication, and extensive data logging. It is an advanced dry strip system from Phoenix that offers a range of features and applications.

ENVIRO

PHOENIX

NE-950

NE 5500

The NA-8000 is a versatile ashing system that can remove anything from organic film to oxide film to SiN. It has a high dose ion implant stripping process and polymer removal process of 10E + 16 or higher level, necessary for critical processes for next-generation wafers. The chamber construction is arranged most suitably for an F-based gas addition process, allowing for particle-free treatment. The system construction is simple, achieving excellent maintainability and reliability, and low cost at the same time. It also allows for flexible system construction (μ wave, RIE, and μ wave + RIE) and easy wafer size change by simply changing the recipe setting. Overall, the NA-8000 is a powerful tool for removing anything and everything from your wafers.

NA-8000

NE 7000

NE 550

PHOENIX II

NE-5000N

NE-7800

RISE 300

NE-730

UPE-2000-OSAP

NE-550C

NA1000

UNA-2000

RISE 200

Euclid Delta-8000 RIE, rotating magnetron RIE oxide etch.

EUCLID DELTA-8000

NLD-570

Under high vacuum conditions, plasma is generated by RF high-frequency discharge, and under the action of bias voltage, specific materials are removed through physical and chemical effects. Etching materials: metal, GaN, In P, SiO2, Si, Polymide and other materials. Load-lock type, fully automatic control, patented ISM electrode, high uniformity, good stability, simple structure and easy maintenance.

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