PANASONIC

PC30B-HS	

Plasma Source: ICP Plasma
Process Gas: 2Lines (standard) *Maximum 6 Lines (e.g. Chlorinated Gas, Fluoride Gas, Ar, O2, He )
Applicable Wafer: ø100 mm wafer with orientation flat (standard) *Option : ø50 mm, ø75 mm, ø50 mm (with O.F.)
Wafer Material: Silicon (standard) *Option : Quartz, GaAs, Sapphire
Machine Dimensions / Weight*1: W 1170 mm × D 2650 mm, H 2100 mm / 1900 kg (Main body only)
Power Source*2: Single phase AC 200V, 6 kVA and Three-phase AC 200V, 15 kVA (Main body only)
Dry Air: 0.49 M Pa to 0.54 M Pa, 40 L / min [A.N.R.]
N 2Source: 0.5 M Pa to 0.7 M Pa, 50 L / min

E600L

PSX303M	

E725SC

PSX303

E600 RIE, poly, nitride, oxide, single-chamber system.

E600

E3000 metal etch (RIE), three chambers, etch, passivation, and dry strip.

E3000

Plasma Cleaner’s parallel plate chamber technology delivers superior etch uniformity over conventional batch systems. Experience surface cleaning before wirebond or flip-chip attach and surface activation and improved underfill wettability and mold encapsulation.

PSX307

PC30B-H

HRe- etch system, low-pressure, high-density plasma source, magnetic confinement.

PANASONIC

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