Description
No descriptionConfiguration
<b>General System Info</b> Wafer Size (inches) : 8 Install Type : Stand Alone Electrical Requirements : 208V <b>Mainframe: Unity II</b> Signal Lamp Tower Bolt-On-SMIF Remote Service Monitors <b>Process Chambers: Qty 2 - DRM Chambers</b> Process Type: VIA Process Ceramic Electrostatic Chuck Chamber Process Kit Material : Quartz Endpoint Type : DA-40 <b>Process Kit Part Numbers</b> Depo shield : 1D10-315183-15 Baffle plate : ES1D10-102848-13 UE : ES1D10-204338-13 Unity II,COVER BELLOWS : 1D10-204419-12 Depo shield window : 1D10-315182-12 Focus ring : 1D10-305983-12 Ring Insulator - A7 LA-4B : 1D05-300180-11 Ring Insulator - A7 LA4-Q : ES1D05-300190-12 Ring Insulator, B2, (DRM2) : ES1D05-300053-14 RING..INSULATOR,C,(DRM2) : ES1D05-300040-13 Ring shield : 1D10-315272-11 <b>Turbo Pump Details</b> Chamber Position Turbo Mfgr. Turbo Model Transfer Chamber EBARA ET300W Position 1 PM1 ET600 Position 2 PM2 ET600 <b>RF/Microwave Generator Details</b> Chamber Position Mfgr. Model Position 1 – Lower RF ENI OEM-25B Position 2 – Lower RF ENI OEM-25B <b>Etch Chamber Pump</b>: BOC Edwards IQDP80 <b>Load Lock Pump</b>: BOC Edwards IQDP80 <b>Transfer Chamber Pump</b>: BOC Edwards IQDP80 <b>Chiller Type:</b> SMC INR-499-201 <b>Gas Box Configuration</b> Gas Line # Gas Flow (sccm) MFC Mfgr. MFC Model PM1 1 C2F6 100 Horiba SEC-Z512MGX 2 CO 500 Tylan 2979 3 02_S 20 Tylan 2979 4 AR 1000 Tylan 2979 5 O2_B 500 Tylan 2979 6 C4F6 30 Tylan 2979 8 N2 200 Horiba SEC-Z512MGX PM2 1 C2F6 100 Horiba SEC-Z512MGX 2 CO 500 Tylan 2979 3 02_S 20 4 AR 1000 5 O2_B 500 6 C4F6 30 8 N2 200 Horiba SEC-Z512MGXOEM Model Description
Plasma Etch Process within 200mm wafer.Documents
No documents
TEL / TOKYO ELECTRON
UNITY IIE 855DD
Verified
CATEGORY
Plasma Etch
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
23372
Wafer Sizes:
8"/200mm
Vintage:
1999
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Logistics Support
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Money Back Guarantee
Available
Transaction Insured by Moov
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Refurbishment Services
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TEL / TOKYO ELECTRONUNITY IIE 855DDPlasma Etch
Vintage: 0Condition: Used
Last VerifiedOver 30 days ago
TEL / TOKYO ELECTRONUNITY IIE 855DDPlasma Etch
Vintage: 0Condition: Used
Last VerifiedOver 60 days ago
TEL / TOKYO ELECTRONUNITY IIE 855DDPlasma Etch
Vintage: 0Condition: Used
Last VerifiedOver 60 days ago
TEL / TOKYO ELECTRONUNITY IIE 855DDPlasma Etch
Vintage: 0Condition: Used
Last VerifiedOver 60 days ago
TEL / TOKYO ELECTRON
UNITY IIE 855DD
Verified
CATEGORY
Plasma Etch
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
23372
Wafer Sizes:
8"/200mm
Vintage:
1999
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
<b>General System Info</b> Wafer Size (inches) : 8 Install Type : Stand Alone Electrical Requirements : 208V <b>Mainframe: Unity II</b> Signal Lamp Tower Bolt-On-SMIF Remote Service Monitors <b>Process Chambers: Qty 2 - DRM Chambers</b> Process Type: VIA Process Ceramic Electrostatic Chuck Chamber Process Kit Material : Quartz Endpoint Type : DA-40 <b>Process Kit Part Numbers</b> Depo shield : 1D10-315183-15 Baffle plate : ES1D10-102848-13 UE : ES1D10-204338-13 Unity II,COVER BELLOWS : 1D10-204419-12 Depo shield window : 1D10-315182-12 Focus ring : 1D10-305983-12 Ring Insulator - A7 LA-4B : 1D05-300180-11 Ring Insulator - A7 LA4-Q : ES1D05-300190-12 Ring Insulator, B2, (DRM2) : ES1D05-300053-14 RING..INSULATOR,C,(DRM2) : ES1D05-300040-13 Ring shield : 1D10-315272-11 <b>Turbo Pump Details</b> Chamber Position Turbo Mfgr. Turbo Model Transfer Chamber EBARA ET300W Position 1 PM1 ET600 Position 2 PM2 ET600 <b>RF/Microwave Generator Details</b> Chamber Position Mfgr. Model Position 1 – Lower RF ENI OEM-25B Position 2 – Lower RF ENI OEM-25B <b>Etch Chamber Pump</b>: BOC Edwards IQDP80 <b>Load Lock Pump</b>: BOC Edwards IQDP80 <b>Transfer Chamber Pump</b>: BOC Edwards IQDP80 <b>Chiller Type:</b> SMC INR-499-201 <b>Gas Box Configuration</b> Gas Line # Gas Flow (sccm) MFC Mfgr. MFC Model PM1 1 C2F6 100 Horiba SEC-Z512MGX 2 CO 500 Tylan 2979 3 02_S 20 Tylan 2979 4 AR 1000 Tylan 2979 5 O2_B 500 Tylan 2979 6 C4F6 30 Tylan 2979 8 N2 200 Horiba SEC-Z512MGX PM2 1 C2F6 100 Horiba SEC-Z512MGX 2 CO 500 Tylan 2979 3 02_S 20 4 AR 1000 5 O2_B 500 6 C4F6 30 8 N2 200 Horiba SEC-Z512MGXOEM Model Description
Plasma Etch Process within 200mm wafer.Documents
No documents
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