Description
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Tool has been de-installed and is stored in an off-site warehouse. [Platen1]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen2]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen3]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:CES333 (max400ml/min) (tube pump)slurry line2:PL-6501 (max400ml/min) (tube pump)torque end point system [Head1]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head2]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head3]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head4]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Cleaner1]megasonic 2roller+1idlercirculating DIW flow (2.0l/min)control temp (20-50deg)megasonic power (950kHz,600w)wafer rotation speed (6rpm) [Cleaner2]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (NH4OH:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Cleaner3]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (FPM:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Dryer]spin rinse dryer (max:2500rpm)ramp heater (1000w infrared heater ) [load port]3load port INLINE METROLOGY NOVA3060 IS NOT INCLUDED IN TOOL.Missing or damaged parts: Not reported.OEM Model Description
The Applied Reflexion CMP system is Applied Materials' 300mm CMP platform delivering innovation and productivity for 100nm and beyond. Based on the production-proven Applied Mirra Mesa CMP architecture, the Applied Reflexion system offers 300mm processing capabilities for oxide, STI, polysilicon, tungsten, and copper applications. Titan Head technology delivers excellent dishing and erosion performance with better repeatability. The system's FullScan endpoint system enables superior process results by scanning the entire wafer. Applied Reflexion's cleaner offers a two-stage brush scrub with single-wafer megasonics in vertical orientation to minimize footprint. Its space efficient design also features factory automation and advanced process control with integrated film thickness metrology and particle monitoring options, as well as a dual wafer robot which increases tool throughput for thin films.Documents
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APPLIED MATERIALS (AMAT)
REFLEXION
Verified
CATEGORY
CMP
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
21630
Wafer Sizes:
12"/300mm
Vintage:
2004
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Similar Listings
View AllAPPLIED MATERIALS (AMAT)
REFLEXION
Verified
CATEGORY
CMP
Last Verified: Over 60 days ago
Key Item Details
Condition:
Used
Operational Status:
Unknown
Product ID:
21630
Wafer Sizes:
12"/300mm
Vintage:
2004
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
Description
No descriptionConfiguration
Tool has been de-installed and is stored in an off-site warehouse. [Platen1]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen2]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:D4505 (max400ml/min) (tube pump)torque end point system [Platen3]30inch platen (max133rpm)4inch pad conditioner (DDF3type,30-120rpm)slurry line1:CES333 (max400ml/min) (tube pump)slurry line2:PL-6501 (max400ml/min) (tube pump)torque end point system [Head1]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head2]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head3]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Head4]membrane press head (3zone 0-15psi)head spindle (max200rpm) [Cleaner1]megasonic 2roller+1idlercirculating DIW flow (2.0l/min)control temp (20-50deg)megasonic power (950kHz,600w)wafer rotation speed (6rpm) [Cleaner2]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (NH4OH:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Cleaner3]2brush 3roller+1idlerrotation speed (brush:max700rpm) (wafer:max50rpm)DIW delivery (DIW:2000ml/min)chemical delivery (FPM:2000ml/min)brush rinse (DIW:1000-4000ml/min) [Dryer]spin rinse dryer (max:2500rpm)ramp heater (1000w infrared heater ) [load port]3load port INLINE METROLOGY NOVA3060 IS NOT INCLUDED IN TOOL.Missing or damaged parts: Not reported.OEM Model Description
The Applied Reflexion CMP system is Applied Materials' 300mm CMP platform delivering innovation and productivity for 100nm and beyond. Based on the production-proven Applied Mirra Mesa CMP architecture, the Applied Reflexion system offers 300mm processing capabilities for oxide, STI, polysilicon, tungsten, and copper applications. Titan Head technology delivers excellent dishing and erosion performance with better repeatability. The system's FullScan endpoint system enables superior process results by scanning the entire wafer. Applied Reflexion's cleaner offers a two-stage brush scrub with single-wafer megasonics in vertical orientation to minimize footprint. Its space efficient design also features factory automation and advanced process control with integrated film thickness metrology and particle monitoring options, as well as a dual wafer robot which increases tool throughput for thin films.Documents
No documents