PVA TEPLA

Plasma systems 400 and 660are low-pressure microwave plasma systems for cleaning advanced chip packages prior to die attach, wire bond and encapsulation. The electrode-free energy feeding is the key factor for processing substrates in their original, unslotted magazines. Microwaves of 2.45 GHz are simply applied through a window in the wall of the vacuum chamber producing a largely extended plasma there. Unslotted magazines are processed in a downstream configuration, slotted magazines are more properly placed on a rotating platform. Any size of magazine can be processed.

The IoN 100 is a barrel plasma reactor designed for R&D and production applications. The technology is based on the proven reactor designs developed over the course of 50+ years by International Plasma Corporation, Branson ICP, Dionex, Gasonics, Metroline, TePla and finally PVA TePla. IoN 100 uses a larger chassis that provides all the gas and power connections.

IoN 100

MC 600

Plasma System is a barrel plasma reactor designed for R&D and production applications.

Ion 10Q

The plasma system 80 Plus is easy to operate and features same side loading and unloading, in manual and automatic mode. The System software complies to the standards in the semiconductor industry.

PS80 Plus

M4L	

The IoN 100-40 Plasma System is our latest advancement in vacuum plasma technology. Gas plasma is fast becoming the technology of choice for surface modification of materials in the life sciences, electronic and industrial arenas due to its versatility and low impact to our environment.

IoN 100-40

Wafer Surface Preparation System - Metrology Systems VPD
WSPS system maps the entire VPD process chain in which the processes or modules in a compact system housing fitted with FFU units are supplemented by the corresponding infrastructure.

WSPS

The TWIN SC-3 is a product of PVA TePla America, LLC, a company that focuses on developing systems for vacuum, high-temperature, and plasma processes, as well as quality inspections. This product is used to monitor the implant dosage on wafers up to 300mm in size. The implant process is an essential step in the production of integrated circuits because it determines the characteristics and properties of the devices by doping specific layers of the silicon substrate. The TWIN SC-3 can measure dose levels ranging from 10E10 to 5E16 at implant energy levels from 1keV to 100 MeV.

TWIN SC-3

The Implant process is a very critical step within the integrated circuits manufacturing line. It defines important characteristics and properties of the devices-to-be by doping certain layers of the silicon substrate.

PVA TEPLA

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